III-V compound SC for optoelectronic devices

Progress in Antimonide Based III-V Compound Semiconductors and Devices

In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devic...

Optoelectronic applications of LTMBE III-V materials

A review of the application of semiconductor layers grown at low substrate temperatures to ultrafast optoelectronics is presented. The films, grown by molecular beam epitaxy primarily around 200 °C and subsequently annealed, are demonstrated to have high resistivity, high mobility, an ultrashort carrier lifetime, and a high dielectric breakdown. This combination of properties makes the low-temp...

III-V Nanostructures on Dissimilar Substrates for Optoelectronic Applications

Integrated cooling for optoelectronic devices

Active refrigeration of optoelectronic components through the use of thin film solid state coolers based on III-V materials is proposed and investigated. Enhanced cooling power comparing to the thermoelectric effect of the bulk material is achieved through thermionic emission of hot electrons over a heterostructure barrier layer. It is shown that these heterostructures can be monolithically int...

Thermoelectric and optoelectronic devices

Overview This proposal aims to build up new ties between Princeton University (PU) and the University of São Paulo (USP) in order to explore innovative semiconductor devices. The focus of the project is to create an interaction between the groups in the development of new semiconductor devices. The collaborative research will be based in the growth and characterization of thermoelectric materia...